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| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5107 Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5107 is a GaAs MMIC chip especially designed for 21.0 ~ 24.0 GHz band Low Noise Amplifier.(LNA) . BLOCK DIAGRAM Vd1 Vd2 Vd3 FEATURES RF frequency : 21.0 to 24.0 GHz Super Low Noise NF=2.5dB (TYP.) Single voltage operation In Vg1 Vg2 Vg3 Out PHOTOGRAPH ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol Vd Id Vg Pin Ta Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (Duration < 1sec) Operating temperature range Parameter Values 5 30 Unit V mA V dBm C TBD TBD Limits TARGET SPECIFICATIONS (Ta=25C) Symbol Fop Gain Delta gain NF VSWR in VSWR out P1dB Output IP3 Vd Id Vg Parameter Operating frequency range Small signal gain Small signal gain flatness Noise figure Input VSWR Output VSWR Output power at 1 dB compression Output power at 3rdorder intercept point Drain bias voltage Drain bias current Gate bias voltage Freq=22GHz Vd=5V,Id=30mA (5) TBD (17) TBD 5 30 No need On-wafer measurement 21.0 17.0 18.0 1.5 2.5 3.5 2.0:1 2.0:1 dBm dBm V mA V as of July '98 24.0 Test conditions Min. Typ. Max. Unit GHz dB dB dB MITSUBISHI ELECTRIC PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5107 Ka-Band 3-Stage Self Bias Low Noise Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : m) 2194 1700 1400 900 400 150 150 150 150 Vd1a Vd1b Vd2a Vd2b Vd3aVd3b GND GND GND RF-in GND Vg1 Vg2 Vg3 GND RF-out GND 106 480 775 1430 2300 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5107 Ka-Band 3-Stage Self Bias Low Noise Amplifier TYPICAL CHARACTERISTICS Small Signal Performances (Vd = 5.0 V, Id = 30 mA, Ta = 25 C ) 25 NF 10 20 8 15 6 10 VSWR out 4 5 2 VSWR in 0 18 19 20 21 22 23 24 25 0 Frequency (GHz) MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5107 Ka-Band 3-Stage Self Bias Low Noise Amplifier AN EXAMPLE OF TEST CIRCUIT 5V 5V 5V Cb Cb Cb :Chip capacitor (39pF) Cb > 100F Vd1a Vd1b Vd2a Vd2b Vd3a Vd3b GND GND GND RF-in GND Vg1 Vg2 Vg3 GND RF-out GND *1 *2 *1 Length of bonding wire < 200 m *2 Number of bonding wire 3 *1 *2 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5107 Ka-Band 3-Stage Self Bias Low Noise Amplifier AN EXAMPLE OF TEST CIRCUIT 2.5V 2.5V 2.5V Cb Cb Cb :Chip capacitor (39pF) Cb > 100F Vd1a Vd1b Vd2a Vd2b Vd3a Vd3b GND GND GND RF-in GND Vg1 Vg2 Vg3 GND RF-out GND *1 *2 *1 Length of bonding wire < 200 m *2 Number of bonding wire 3 *1 *2 MITSUBISHI ELECTRIC as of July '98 |
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